LSH15N135F1A Datasheet | Sheier

Features - Offers high breakdown voltage to 1350V for improved reliability LSH15N135F1 A FS IGBT 1350V, 15A, 1.75V - Powerful monolithic body diode with low forward voltage designed for soft mutation only - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat - Qualified according to JESD-022 for target applications Applications - Inductive cooking - Inverterized microwave ovens - Resonant converters - Soft switching applications Package pin definition - Pin 1 -- Gate - Pin 2 & Backside -- Collector - Pin 3 -- Emmiter Package Marking and Ordering Information Part # Vce Ic LSH15N135F1 A 1350V 15A Vcesat, Tvj=25o C 1.75V Tvjmax 175 Package TO-247-3L Rev1.0 2021-05-21 .share-leshan..cn Page 1 Absolute Maximum Ratings Parameter Collector-Emmiter voltage CD collector current TC = 25°C TC = 100°C Pulsed collector current (TC = 25°C, tp limited by Tjmax) Non repetitive peak collector current 1) Turn off safe operating area VCE ≤ 1350V, Tvj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current (TC = 25°C, tp limited by Tjmax) Gate-emitter voltage Power dissipation Tc = 25°C Power dissipation Tc = 100°C Operating junction and storage temperature Soldering temperature, （0.063in.）form case for 10s Mounting torque,M3 Screw porcesses:3 wave soldering 1.6mm Maximum of...