High
Current capacity speed
B. Base C. Collector E. Emitter.
High switching.
Wide
safe operation area
Absolute Maximum Ratings:( Tc=25℃ unless specified)
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol
BVCEO BVCBO BVEBO Icm Pcm Tjm Tstg
Value
≥ 800 ≥ 1100 ≥9 3 50 150 - 55 ~ 150
Unit
V V V A W ℃ ℃
Electronical Characteristic: ( Tc=25℃ unless specified) Paramet.
Full PDF Text Transcription for BU3150AF (Reference)
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BU3150AF. For precise diagrams, and layout, please refer to the original PDF.
www.jdsemi.cn BU3150AF *Applications: ◆ ◆ Charger NPN Power Transistor Electronical Ballasts for fluorescent lighting and Switch mode power supplies *Features: ◆ High Current capacity speed B.Base C.Collector E.