Shindengen DF10SC4M
Schottky Barrier Diodes
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Symbol Tstg Tj Conditions Ratings Unit -40 to 150 ℃ 150 ℃ Repetitive peak reverse voltage Repetitive peak surge reverse voltage VRRM VRRSM Pulse width 0.5ms, duty=1/40 40 V 45 V 50Hz sine wave, Resistance load, Rating for each Average forward current IF(AV) diode IF(AV)/2, Tc=125℃ 10 A 50Hz sine wave, Resistance load, Rating for each Average forward current IF(AV) diode IF(AV)/2, On Al-Cu substrate, Ta=33℃ 6.8 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=125℃ 100 A Repetitive peak surge reverse power PRRSM Pulse width 10µs, Tj=25℃, per diode 330 W ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 DF10SC4M_Rev.01(2020.01)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance VF IR Ct Rth(j...