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K1194 - 2SK1194

Key Features

  • Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1194 ( F05E23 ) 230V 0.5A OUTLINE DIMENSIONS Case : E-pack (Unit : mm) FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input Product related to Integrated Service Digital Network RATINGS Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET 2SK1194 ( F05E23 ) ●Electrical Characteristics Tc = 25℃ Item Symbole Conditions Drain-Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 230V, VGS = 0V Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V Forward Tranｓconductance gfs ID = 0.