K2177 - 2SK2177

Features

Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

Shindengen

Datasheet Details

Part number	K2177
Manufacturer	Shindengen
File Size	249.71 KB
Description	2SK2177
Datasheet	K2177 Datasheet
Additional preview pages of the K2177 datasheet.

📁 Similar Datasheet

K2176 - 2SK2176 (Rohm)
K210 - Silicon Zener Diodes (Aeroflex)
K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Semiconductor)
K210 - LOW LEVEL ZENER DIODES (Knox Inc)
K210 - 2SK210 (Toshiba Semiconductor)
K2101 - 2SK2101 (Fuji Electric)
K2111 - MOS Field Effect Transistor (Kexin)
K2111 - 2SK2111 (NEC)
K2114 - 2SK2114 (Hitachi Semiconductor)
K2115 - 2SK2115 (Hitachi Semiconductor)

Other Datasheets by Shindengen

K2196 - 2SK2196
K2197 - 2SK2197

Full PDF Text Transcription

Click to expand full text

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2177 (F1E50VX2) 500V 1A OUTLINE DIMENSIONS Case : E-pack (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET 2SK2177 ( F1E50VX2 ) ●Electrical Characteristics Tc = 25℃ Item Symbol Conditions Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V Forward Tranｓconductance gfs ID = 0.

Published: Feb 16, 2015 |