Shindengen M2FH3
Schottky Barrier Diodes
| Part No. | M2FH3 |
|---|---|
| Datasheet | M2FH3 Download |
| Manufacturer |  Shindengen |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 125 ℃ Junction temperature Tj -55 to 125 ℃ Repetitive peak reverse voltage Average forward current VRRM IF(AV) 50Hz sine wave, Resistance load, Tc=70℃ ※ 30 V 6 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=25℃ 110 A ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 M2FH3_Rev.01(2020.01)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Forward voltage Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance VF VF IR Ct Rth(j-c) Rth(j-l) Rth(j-a) IF=6.0A, Pulse measurement IF=2.0A, Pulse measurement VR=30V, Pulse measurement f=1MHz, VR=10V Junction to case, On glass-epoxy substrate ※ Junction to lead, On glass-epoxy substrate ※ Junction to ambient, On glass-epoxy substrate ※ ※︓See the original Specifications Ratings MIN TYP MAX 0.36 0.3 4 240 14 16 55 Unit V V mA pF ℃/W ℃/W ℃/W Shindengen Electric Manufacturing Co., Ltd.
