Shindengen S1NBC80-7062
Bridge Diodes
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 150 ℃ Junction temperature Tj -55 to 150 ℃ Repetitive peak reverse voltage VRRM 800 V 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate Tl=105℃ 1.5 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=27℃ ※ 1 A 50Hz, Sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 0.84 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM Tj=25℃ 60 A Current squared time I²t 1ms≦tp<10ms, Tj=25℃, per diode 10 A2s ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/6 S1NBC80-7062_Rev.02(2020.12)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Thermal resistance Thermal resistance Thermal resistance VF IR Rth(j-l) Rth(j-a) Rth(...