Shindengen S1WB60B-7062
Bridge Diodes
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -40 to 150 ℃ Junction temperature Tj -40 to 150 ℃ Repetitive peak reverse voltage VRRM 600 V 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 1 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM Tj=25℃ 50 A Current squared time I²t 1ms≦tp<10ms, Tj=25℃, per diode 16 A2s ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/5 S1WB(A)60B-7062_Rev.02(2020.12)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Thermal resistance Thermal resistance VF IR Rth(j-l) Rth(j-a) IF=0.5A, Pulse measurement, per diode VR=600V, Pulse measurement, per diode Junction to lead, On glass-epoxy substrate ※ Junction to ambient, On glass-epoxy substrate ※ ※︓See the original Specifications Ratings MIN TYP MAX 1 10 10 65 Unit V μA ℃/W ℃/W Shindengen Electric Manufacturing Co., Ltd.