Shindengen S1ZB80-7101
Bridge Diodes
| Part No. | S1ZB80-7101 |
|---|---|
| Datasheet | S1ZB80-7101 Download |
| Manufacturer |  Shindengen |
| Description | Bridge Diodes |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -40 to 150 ℃ Junction temperature Tj 150 ℃ Repetitive peak reverse voltage VRRM 800 V Average forward current IF(AV) 50Hz sine wave, Resistance load, On alumina substrate, Ta=25℃ ※ 0.8 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 0.5 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM Tj=25℃ 30 A Current squared time I²t 1ms≦t＜10ms, Tj=25℃, per diode 4.5 A2s ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/5 S1ZB80-7101_Rev.02(2020.12)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Thermal resistance Thermal resistance Thermal resistance VF IR Rth(j-l) Rth(j-a) Rth(j-a) IF=0.4A, Pulse measurement, per diode VR=800V, Pulse measurement, per diode Junction to lead Junction to ambie...
