Shindengen S30VT160
Bridge Diodes
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Average forward current Surge forward current Current squared time Dielectric strength Mounting torque Symbol Conditions Tstg Tj VRRM IF(AV) 50Hz sine wave, Resistance load, With heatsink, Tc=116℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM per diode, Tj=25℃ I²t 1ms≦t<10ms, Tj=25℃, per diode Vdis Terminals to case, AC 1 minute TOR (Recommended torque : 0.6N・m) ※︓See the original Specifications Ratings -40 to 150 150 1600 30 350 300 2 0.8 Unit ℃ ℃ V A A A2s kV N・m Shindengen Electric Manufacturing Co., Ltd. 1/6 S30VT160_Rev.01(2020.01)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) IF=10A, Pulse measurement, per diode VR=1600V, Pulse measurement, per diode Junction to case, With heatsink ※︓See the original Specifications Ratings MIN TYP MAX 1.05 100 0.5 Unit V μA ℃/W Shindengen Electric Manufacturing Co., Ltd.