YXD2302NE1 - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The YXD2302NE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low onresistance.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS =20V，ID =2.5A RDS(ON)(Typ. )=61mΩ @VGS=2.5V RDS(ON)(Typ. )=46mΩ @VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

Shiningic

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Datasheet Details

Part number	YXD2302NE1
Manufacturer	Shiningic
File Size	855.65 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	YXD2302NE1 Datasheet
Additional preview pages of the YXD2302NE1 datasheet.

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sales.Mr.wang13826508770 www.sztssd.com YXD2302NE1 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The YXD2302NE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low onresistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =20V，ID =2.5A RDS(ON)(Typ.)=61mΩ @VGS=2.5V RDS(ON)(Typ.)=46mΩ @VGS=4.

Published: Jan 21, 2025 |