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YXD2302NE1 - 20V N-Channel Enhancement Mode MOSFET

General Description

The YXD2302NE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low onresistance.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =20V，ID =2.5A RDS(ON)(Typ. )=61mΩ @VGS=2.5V RDS(ON)(Typ. )=46mΩ @VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number YXD2302NE1
Manufacturer Shiningic
File Size 855.65 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet YXD2302NE1 Datasheet

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sales.Mr.wang13826508770 www.sztssd.com YXD2302NE1 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The YXD2302NE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low onresistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =20V，ID =2.5A RDS(ON)(Typ.)=61mΩ @VGS=2.5V RDS(ON)(Typ.)=46mΩ @VGS=4.