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PA2423G - 2.4 GHz Bluetooth Class 1 Power Amplifier

General Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications.

making it capable of overcoming insertion losses of up to 2.5 dB between amplif

Key Features

  • an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA. Shipping Method Diced wafer Waffle pack The silicon/silicon-germanium stru.

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Datasheet Details

Part number PA2423G
Manufacturer SiGe Semiconductor Inc.
File Size 388.97 KB
Description 2.4 GHz Bluetooth Class 1 Power Amplifier
Datasheet download datasheet PA2423G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% poweradded efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm Class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation.