PA2423L Datasheet PDF - SiGe Semiconductor Inc. 2.4 GHz Bluetooth Class 1 Power Amplifier Specs

PA2423L - 2.4 GHz Bluetooth Class 1 Power Amplifier

Datasheet Summary

Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications.

making it capable of overcoming insertion losses of up to 2.5 dB between ampli

Features

an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423L operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L.
and its exp.

Datasheet Details

Part number	PA2423L
Manufacturer	SiGe Semiconductor Inc.
File Size	367.62 KB
Description	2.4 GHz Bluetooth Class 1 Power Amplifier
Datasheet	PA2423L Datasheet
Additional preview pages of the PA2423L datasheet.

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Full PDF Text Transcription

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PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation.

Published: Mar 22, 2005 |