SiT5359 Datasheet | SiTime

Description The Si T5359 is a precision MEMS Super-TCXO optimized for ±50 ppb stability from -40°C to 105°C. Engineered for best dynamic performance, it is ideal for high reliability tele, wireless and networking, industrial, precision GNSS and audio/video applications. Leveraging Si Time’s unique Dual MEMS® temperature sensing and Turbopensation® technologies, the Si T5359 delivers the best dynamic performance for timing stability in the presence of environmental stressors such as air flow, temperature perturbation, vibration, shock, and electromagnetic interference. This device also integrates multiple on-chip regulators to filter power supply noise, eliminating the need for a dedicated external LDO. The Si T5359 offers three device configurations that can be ordered using Ordering Codes for: 1) TCXO with non-pullable output frequency, 2) VCTCXO allowing voltage control of output frequency, 3) DCTCXO enabling digital control of output frequency using an I2C interface, pullable to 5 ppt (parts per trillion) resolution. The Si T5359 can be factory programmed for any bination of frequency, stability, voltage, and pull range. Programmability enables designers to optimize clock configurations while eliminating long lead times and customization costs associated with quartz devices where each frequency is custom built. Refer to Manufacturing Guideline for proper reflow profile and PCB cleaning remendations to ensure best performance. Features - Output 60.000001- 189 MHz, and 208- 220 MHz, in 1 Hz steps - Factory programmable options for short lead time - Best dynamic stability under airflow, thermal shock - ±50 ppb stability over temperature, -40°C to 105°C - ±1 ppb/°C typical frequency slope (ΔF/ΔT) - 1.5e-11 ADEV at 10 second averaging time - No activity dips or micro jumps - Resistant to shock, vibration and board bending - On-chip regulators eliminate the need for external LDOs - Digital frequency pulling (DCTCXO) via I2C - Digital control of output frequency and pull...