BAW78M
BAW 78M
Silicon Switching Diode Preliminary data
- Switching applications
- High breakdown voltage
4 5 3 2 1
VPW05980
Type BAW 78M
Marking GDs
Ordering Code Pin Configuration Q62702-A3471
Package
1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, T S ≤ 110 °C Junction temperature Storage temperature
Symbol
Values 400 400
1 1 10 1 150
- 65 ...+150
Unit V
VR VRM
IF I FM I FS Ptot Tj T stg
W °C
Thermal Resistance Junction
- ambient
1)
Rth JA Rth JS
≤ 95 ≤ 40
K/W
Junction
- soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Jul-27-1998 1998-11-01
BAW 78M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V Unit
V(BR) VF
I (BR) = 100 µA
Forward...
