BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB501M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB502M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
BB503 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier(Hitachi)
Other Datasheets by Siemens Group
BB512- Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
BB515- Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance)
BB535- Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio / low series resistance)
BB555- Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance)
BB565- Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
Full PDF Text Transcription
Click to expand full text
BB 545 Silicon Tuning Diode
Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance
Type BB 545
Marking Ordering Code white U Q62702-B583
Pin Configuration 1=K 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Thermal Resistance Junction ambient
1)
RthJA
≤ 450
K/W
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Jan-31-1997
BB 545
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max.