BB811
BB 811
Silicon Variable Capacitance Diode q
BB 811
Frequency range up to 2 GHz; special design for use in TV-sat indoor units
Type BB 811
Marking white T
Ordering Code (tape and reel) Q62702-B478
Pin Configuration
Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction
- ambient Rth JA
≤
Symbol VR IF Top Tstg
Values 30 20
- 55 … + 150
Unit V m A
- 55 … + 125 ˚C
K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
BB 811
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio f = 1 MHz, VR = 1 V/28 V Series resistance f = 100 MHz, CT = 9 p F Case capacitance f = 1 MHz Capacitance matching f = 1 MHz, VR = 0.5 … 28 V Series inductance Symbol min. IR
- - CT 7.8 0.85 CT1 CT28 r S...
