BB831 Description
Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C IR 500 IR 20 nA Symbol min. For details please refer to Application Note 047 Semiconductor Group 2 Aug-03-1998 BB 831 Diode capacitance CT = f (VR ) f = 1MHz Semiconductor Group 3 Aug-03-1998.