BBY26-S1 datasheet by Siemens Group.
| Part number | BBY26-S1 |
|---|---|
| Datasheet | BBY26-S1_SiemensSemiconductorGroup.pdf |
| File Size | 15.56 KB |
| Manufacturer | Siemens Group |
| Description | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
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Semiconductor Group 1 BBY 24 … BBY 27 at TA = 25 ˚C, unless otherwise specified. IR CT 12 16 20 36 16 20 24 40 Values typ. 10 nA pF Unit Capacitance ratio VR1 = 0, VR2 = 120 V Semiconductor Group.
View all Siemens Group datasheets
| Part Number | Description |
|---|---|
| BBY24-BBY27 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY24-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY25-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY27-S2 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY33BB-2 | Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
| BBY33DA-2 | Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
| BBY34C | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY34D | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY35F | Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY51 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
