BBY33DA-2 datasheet by Siemens Group.
| Part number | BBY33DA-2 |
|---|---|
| Datasheet | BBY33DA-2_SiemensSemiconductorGroup.pdf |
| File Size | 20.82 KB |
| Manufacturer | Siemens Group |
| Description | Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
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BBY 33 DA-2 at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 20 V Diode capacitance VR = 4 V, f = 1 MHz Capacitance ratio VR1 = 0, VR2 = 25 V Figure of merit VR = 4 V, f = 50 MHz Symbol min. IR CT CT0 CT25 Q 1.7 3.0 3500 Values typ.
View all Siemens Group datasheets
| Part Number | Description |
|---|---|
| BBY33BB-2 | Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
| BBY34C | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY34D | Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY35F | Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) |
| BBY24-BBY27 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY24-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY25-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY26-S1 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY27-S2 | Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
| BBY51 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
