BBY56-02W
BBY 56-02W
Silicon Tuning Diode Preliminary data
- Excellent linearity
- High Q hyperabrupt tuning diode
- Low series inductance
- Designed for low tuning voltage operation for VCO’s in mobile munications equipment
- Very low capacitance spread
VES05991
Type BBY 56-02W
Marking 6
Ordering Code Q62702-
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V m A °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
Au 1998-11-01 -14-1998
BBY 56-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100
Unit
IR IR
- n A µA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics Diode capacitance
59 39 22 19.4 15.9 2.45 0.3 0.09 0.6 67 43 27.2 23.7 19
- p F
VR = 0.32 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2...
