BBY56-03W- Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
BBY51- Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
BBY52- Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
BBY53- Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
BBY55-02W- Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
BBY55-03W- Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
BBY57-02W- Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
BBY57-03W- Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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BBY 56-02W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread
2
1
VES05991
Type BBY 56-02W
Marking 6
Ordering Code Q62702-
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -14-1998
BBY 56-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max.
BBY56-02W Datasheet
