• Part: BBY56-03W
  • Description: Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
  • Category: Diode
  • Manufacturer: Siemens Group
  • Size: 13.96 KB
Download BBY56-03W Datasheet PDF
Siemens Group
BBY56-03W
BBY 56-03W Silicon Tuning Diode Preliminary data - Excellent linearity - High Q hyperabrupt tuning diode - Low series inductance - Designed for low tuning voltage operation for VCO’s in mobile munications equipment - Very low capacitance spread VPS05176 Type BBY 56-03W Marking 6 cathd. red Ordering Code Q62702- Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V m A °C VR IF T op T stg Semiconductor Group Semiconductor Group Au 1998-11-01 -14-1998 BBY 56-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100 Unit IR IR - n A µA VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance 59 39 22 19.4 15.9 2.45 0.3 0.09 0.6 67 43 27.2 23.7 19 - p F VR = 0.32 V, f = 1 MHz VR = 1 V, f = 1...