BA887 Overview
Semiconductor Group 1 10 94 BA 887 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Reverse current VR = 30 V Forward voltage IF = 100 mA Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Value typ. 0.9 0.52 0.27 22 4.2 2.5 max.