BA887 Datasheet | Siemens Semiconductor Group

Silicon PIN Diode Preliminary Data q q BA 887 RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code (taped) Q62702- Pin Configuration Marking 1 2 3 A C PDs Package BA 887 SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 40 °C1) Junction temperature Storage temperature range Thermal Resistance Junction-soldering point1) Junction-ambient Symbol Values 50 100 250 150 - 55 … + 150 Unit V mA mW °C °C VR IF Ptot Tj Tstg Rth JS Rth JA ≤ 220 ≤ 300 K/W K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94 BA 887 Characteristics per Diode at TA = 25 °C, unless...