The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BAT 62-02W
Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies
2
1
VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BAT 62-02W
Marking Ordering Code L Q62702-A1028
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 ...+150 Unit V mA °C
VR IF Tj Tstg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 650 ≤ 810
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Jul-02-1998 1998-11-01
BAT 62-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min.
BAT62-02W Datasheet
