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BC516 - PNP Silicon Darlington Transistor

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PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values Unit 30 V 40 10 500 mA 800 100 200 625 mW 150 ˚C – 65 … + 150 Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.