BCR108S
BCR108S is NPN Silicon Digital Transistor manufactured by Siemens Semiconductor Group.
BCR 108S
NPN Silicon Digital Transistor Array
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated Transistors in on package
- Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
Type BCR 108S
Marking Ordering Code Pin Configuration WHs
Package
Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150
- 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction...
