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BCR 112W
NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ)
Type BCR 112W
Marking Ordering Code WFs Q62702-C2284
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 10 15 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 240 ≤ 105
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.
BCR112W Datasheet
