BCR116W Datasheet | Siemens Semiconductor Group

BCR 116W NPN Silicon Digital Transistor - Switching circuit, inverter, interface circuit, driver circuit - Built in bias resistor (R1=4.7kΩ, R2=47kΩ) Type BCR 116W Marking Ordering Code WGs UPON INQUIRY Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 250 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 240 ≤ 105 K/W Junction - soldering point 1) Package mounted on pcb...