BCR119S Datasheet | Siemens Semiconductor Group

BCR 119S NPN Silicon Digital Transistor Array - Switching circuit, inverter, interface circuit, driver circuit - Two (galvanic) internal isolated Transistors in one package - Built bias resistor (R1=4.7kΩ) Type BCR 119S Marking Ordering Code Pin Configuration WKs Package Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 250 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA...