BCW60FN Datasheet Text
NPN Silicon AF Transistors
BCW 60 BCX 70 q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz plementary types: BCW 61, BCX 71 (PNP)
Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K
Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs
Ordering Code (tape and reel) Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 60 BCX 70
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient1) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150
- 65 … + 150 45 45
Unit V mA mW ˚C
310 240
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 60 BCX 70
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 Collector-base breakdown voltage IC = 10 µA BCW 60, BCW 60 FF BCX 70 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain 1) IC = 10 µA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60...
