BCW61FN Datasheet Text
PNP Silicon AF Transistors
BCW 61 BCX 71 q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz plementary types: BCW 60, BCX 70 (NPN)
Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX 71G BCX 71H BCX 71J BCX 71 K
Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs
Ordering Code (tape and reel) Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 61 BCX 71
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient1) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150
- 65 … + 150 45 45
Unit V mA mW ˚C
310 240
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 61 BCX 71
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 Collector-base breakdown voltage IC = 10 µA BCW 61, BCW 61 FF BCX 71 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain 1) IC = 10 µA, VCE = 5 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF,...
