BDP950
BDP 948
PNP Silicon AF Power Transistor
- For AF drivers and output stages
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- plementary type: BDP947, BDP949 (NPN)
Type BDP 948 BDP 950
Marking Ordering Code BDP 948 Q62702-D1336 BDP 950 Q62702-D1338
Pin Configuration 1=B 1=B 2=C 2=C 3=E 3=E 4=C 4=C
Package SOT-223 SOT-223
Maximum Ratings Parameter Collector-emitter voltage BDP 948 BDP 950 Collector-base voltage BDP 948 BDP 950 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 45 60
Unit V
VCEO
VCBO
45 60
VEBO IC ICM IB IBM Ptot Tj Tstg Rth JA Rth JS
5 3 5 200 500 3 150
- 65 ... + 150 ≤ 42 ≤ 17 W °C m A A
K/W
Junction
- soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
Nov-28-1996
BDP 948
Electrical Characteristics at...
