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BF2000 - Silicon N Channel MOSFET Tetrode

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BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 3 4 2 1 VPS05178 Type BF 2000 Marking Ordering Code NDs Q62702-F1771 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Total power dissipation, T S = 76 °C Storage temperature Channel temperature Symbol Value 12 30 10 200 - 55 ...+150 150 mW °C Unit V mA VDS ID ±I G1/2SM Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BF 2000 Electrical Characteristics at TA = 25 °C; unless otherwise specified.