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Silicon N Channel MOSFET Triode
q
BF 999
For high-frequency stages up to 300 MHz, preferably in FM applications
Type BF 999
Marking LB
Ordering Code (tape and reel) Q62702-F1132
Pin Configuration 1 2 3 G D S
Package1) SOT-23
Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - ambient 2) Rth JA
≤
Symbol VDS ID
±
Values 20 30 10 200
Unit V mA
IGSM
Ptot Tstg Tch
mW
– 55 … + 150 ˚C 150
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 999
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
BF999 Datasheet
