BF999 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BF999 |
|---|---|
| Datasheet | BF999_SiemensSemiconductorGroup.pdf |
| File Size | 116.22 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon N-Channel MOSFET Triode |
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Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 999 at TA = 25 ˚C, unless otherwise specified. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ± Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BF999 | Silicon N-Channel MOSFET Triode | Infineon Technologies AG |
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BF994S | Silicon N Channel MOSFET Tetrode |
| BF995 | Silicon N Channel MOSFET Tetrode |
| BF996S | Silicon N Channel MOSFET Tetrode |
| BF997 | Silicon N Channel MOSFET Tetrode |
| BF998 | Silicon N-Channel MOSFET Tetrode |
| BF998R | Silicon N-Channel MOSFET Tetrode |
| BF998W | Silicon N-Channel MOSFET Tetrode |
| BF926 | PNP SILICON PLANAR TRANSISTOR |
| BF939 | PNP SILICON PLANAR TRANSISTOR |
| BF959 | NPN Silicon RF Transistor |
