BFG235 - NPN Silicon RF Transistor

Siemens Semiconductor Group (now Infineon)

Datasheet Details

Part number	BFG235
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	48.73 KB
Description	NPN Silicon RF Transistor
Datasheet	BFG235 Datasheet

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Full PDF Text Transcription (Reference)

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BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 235 BFG235 Q62702-F1432 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 300 40 mW 2000 150 - 65 ... + 150 - 65 ...