BFG235 Overview
BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telemunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 35 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS...
