BFP23 Datasheet | Siemens Semiconductor Group

PNP Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q plementary types: BFP 22, BFP 25 (NPN) q 1 3 2 BFP 23 BFP 26 Type BFP 23 BFP 26 Marking - Ordering Code (tape and reel) Q62702-F622 Q62702-F722 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BFP 26 BFP 23 200 200 6 200 500 100 200 625 150 - 65 … + 150 300 300 Unit V m A m W ˚C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. BFP 23 BFP 26 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 23 IC = 1 m A BFP 26 Collector-base breakdown voltage BFP 23 IC = 100 µA BFP 26 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V1) IC = 30 m A, VCE = 10 V1) BFP 23 BFP 26 BFP 23 BFP 26 IEB0 h FE 25 40 30 25 VCEsat - - VBEsat - - - - 0.4 0.5 0.9 - - - - - - - - V V(BR)CE0 200 300 V(BR)CB0 200 300 V(BR)EB0 ICB0 - -...