BFP280W
BFP280W is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
BFP 280W
NPN Silicon RF Transistor
- For low noise, low-power amplifiers in mobile munication systems (pager, cordless telephone) at collector currents from 0.2m A to 8m A
- f T = 7,5GHz
F = 1.5d B at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 280W REs Q62702-F1504 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 10 1.2 m W 80 150
- 65 ... + 150
- 65 ... + 150 ≤ 430 °C m A Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 116 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-12-1996
BFP 280W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
8 100
- V µA 100 n A 100 µA 1 30 200
IC = 1 m A, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO h FE
VCE = 10 V, VBE = 0
Collector-base cutoff...
