BFP93 Datasheet | Siemens Semiconductor Group

BFP 93A NPN Silicon RF Transistor - For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 m A to 30 m A ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 93A FEs Q62702-F1144 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 m W 300 150 - 65 ... + 150 - 65 ... + 150 ≤ 240 °C m A Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 78 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 n A 100 µA 10 50 200 IC = 1 m A, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO h FE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff...