BFR280W Description
BFR 280W NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile munication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 435 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 115 °C Junction temperature Ambient temperature Storage temperature...