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BFS 480
NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7GHz
F = 1.5dB at 900MHz
• Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C
Package SOT-363
data below is of a single transistor
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 10 1.2 mW 80 150 - 65 ... + 150 - 65 ...
BFS480 Datasheet
