BFS481 Description
BFS 481 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA fT = 8 GHz F = 1.4 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS ≤ 83 °C Junction temperature Ambient temperature Storage...