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BFS 481
NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz
F = 1.4 dB at 900 MHz
• Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 481 RFs Q62702-F1572 1/4 = B 2/5 = E 3/6 = C
Package SOT-363
data below is of a single transistor
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ...
BFS481 Datasheet
