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BGA312 - Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BGA310 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
BGA318 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
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BGA425 Si-MMIC-Amplifier
BGA427 Si-MMIC-Amplifier

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BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0042 Pin Configuration 1 RFout/bias 2 GND 3 RFinput Package 4 GND SOT-143 BGA 312 BMs Maximum Ratings Parameter Device current Symbol Value 60 250 10 150 -65 ...+150 -65 ...