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BGA427 - Si-MMIC-Amplifier

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Part Number Description Manufacturer
BGA427 Si-MMIC-Amplifier Infineon Technologies AG
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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BGA420 Si-MMIC-Amplifierin
BGA425 Si-MMIC-Amplifier
BGA310 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
BGA312 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
BGA318 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)

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BGA 427 Si-MMIC-Amplifier in SIEGET® 25-Technologie Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage VD = 2 V to 5 V • Reverse isolation < 35 dB (appl.2) 4 3 4 2 1 VPS05605 3 +V OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA 427 Parameter Marking Ordering Code BMs Q62702-G0067 Pin Configuration 1, IN 2, GND Symbol Package 3, +V 4, Out Value 25 6 150 -10 150 -65 ...+150 -65 ...