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Silicon Switching Diode Array
q q
BGX 50 A
Bridge configuration High-speed switch diode chip
Type BGX 50 A
Marking U1s
Ordering Code (tape and reel) Q62702-G38
Pin Configuration
Package1) SOT-143
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF Ptot Tj Tstg
Values 50 70 140 210 150 – 65 … + 150
Unit V mA mW ˚C
640 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BGX 50 A
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
BGX50A Datasheet
