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BPW33 - Silizium-Fotodiode/ Silicon Photodiode

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value 40 + 85 7 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Character

Key Features

  • q Especially suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silizium-Fotodiode Silicon Photodiode BPW 33 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 1.8 1.4 3.5 3.0 0.6 0.4 2.2 1.9 Approx. weight 0.1 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm q Sperrstromarm (typ. 20 pA) q DIL-Plastikbauform mit hoher Packungsdichte Anwendungen q Belichtungsmesser q Farbanalyse Features q Especially suitable for applications from 350 nm to 1100 nm q Low reverse current (typ.