BSM200GB120 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BSM200GB120 |
|---|---|
| Datasheet | BSM200GB120_SiemensSemiconductorGroup.pdf |
| File Size | 128.30 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | IGBT |
|
|
Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Feb-14-1997 BSM 200 GB 120 DL , at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ.
View BSM200GB120DLC datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BSM200GB120DLC | IGBT | eupec |
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BSM200GB120DL | IGBT |
| BSM200GB120DN2 | IGBT |
| BSM200GAL120DN2 | IGBT |
| BSM200GT120DN2 | IGBT |
| BSM25GAL120DN2 | IGBT |
| BSM25GB120DN2 | IGBT |
| BSM25GD120D2 | IGBT |
| BSM100GAL120DN2 | IGBT |
| BSM100GB120DN2 | IGBT |
| BSM100GB120DN2K | IGBT |
