Datasheet Summary
BSM 200 GB 120 DL
IGBT Power Module Preliminary data
- Low Loss IGBT
- Low inductance halfbridge
- Including fast free- wheeling diodes
- Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
Package HALF-BRIDGE 2
Ordering Code C67076-A2300-A70
1200V 340A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 340 200
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
680 400
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C
TC = 25...
