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BSM200GB120DL - IGBT

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BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2300-A70 1200V 340A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 340 200 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 680 400 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1400 W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.