BSM35GD120D2 Datasheet | Siemens Semiconductor Group

BSM 35 GD 120 D2 IGBT Power Module Preliminary data - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Package SIXPACK 1 Ordering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.44 ≤ 0.8 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature...