BSM35GD120D2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 300 W 260 Safe operating area IC = ƒ(VCE) parameter:.
BSM35GD120D2 is IGBT manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
| BSM35GD120D2 | IGBT Power Module |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 300 W 260 Safe operating area IC = ƒ(VCE) parameter:.