BSM50GD120DN2 Overview
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 360 W Safe operating area IC = ƒ(VCE) parameter:.
BSM50GD120DN2 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BSM50GD120DN2 |
|---|---|
| Datasheet | BSM50GD120DN2_SiemensSemiconductorGroup.pdf |
| File Size | 126.61 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | IGBT |
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Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 360 W Safe operating area IC = ƒ(VCE) parameter:.
View BSM50GD120DN2G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BSM50GD120DN2G | IGBT | eupec |
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