BSM50GD120DN2G Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 450 W Safe operating area IC = ƒ(VCE) parameter:.
BSM50GD120DN2G is IGBT manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
eupec |
BSM50GD120DN2G | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 450 W Safe operating area IC = ƒ(VCE) parameter:.