BSM50GD120DN2G
BSM50GD120DN2G is manufactured by Siemens Semiconductor Group.
BSM 50 GD 120 DN2G
IGBT Power Module Preliminary data
- Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
Package ECONOPACK 3
Ordering Code C67070-A2521-A67
1200V 78A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 78 50
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
156 100
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.35 ≤ 0.7 2500 16 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature...
